Published September 30, 2000
| Version v1
Journal article
Molecular beam epitaxy: equipment, devices, technology
Creators
- 1. Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk (Russian Federation)
Description
no abstract available
Availability note (English)
Available from http://dx.doi.org/10.1070/PU2000v043n09ABEH000790Additional details
Identifiers
Publishing Information
- Journal Title
- Physics Uspekhi
- Journal Volume
- 43
- Journal Issue
- 9
- Journal Page Range
- p. 923-925
- ISSN
- 1063-7869
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40071159
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- CRYSTAL GROWTH; EQUIPMENT; MOLECULAR BEAM EPITAXY
- Descriptors DEC
- CRYSTAL GROWTH METHODS; EPITAXY
Optional Information
- Notes
- Abstract only