Published November 29, 1976
| Version v1
Journal article
An EPR study of optical absorption of the oxygen-vacancy pair in electron-irradiated silicon
Creators
- 1. State Univ. of New York, Albany (USA). Dept. of Physics
Description
The negative charge state of the vacancy-oxygen pair (Si-B1) in irradiated silicon was populated by illumination with polarized light, from which the direction of the electric dipole moment was determined to be near <110> perpendicular to the (Si-O-Si) bond axis. Energy dependence of the alignment suggests the presence of an optical absorption band at lambda=1.30μm. (Auth.)
Additional details
Identifiers
Publishing Information
- Journal Title
- Physics Letters A
- Journal Volume
- 59
- Journal Issue
- 3
- Series
- Phys. Lett., A.
- Journal Page Range
- 238-240
- ISSN
- 0375-9601
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 8310087
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHEMICAL BONDS; DICHROISM; ELECTRIC DIPOLE MOMENTS; ELECTRON SPIN RESONANCE; ELECTRONS; ENERGY DEPENDENCE; ENERGY-LEVEL TRANSITIONS; EXCITED STATES; FERMI LEVEL; GROUND STATES; IMPURITIES; INTERSTITIALS; IRRADIATION; MAGNETIC FIELDS; OPTICAL PROPERTIES; OXYGEN; PHOTON BEAMS; POLARIZED BEAMS; SILICON; VACANCIES
- Descriptors DEC
- BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIPOLE MOMENTS; ELECTRIC MOMENTS; ELEMENTARY PARTICLES; ELEMENTS; ENERGY LEVELS; FERMIONS; LEPTONS; MAGNETIC RESONANCE; NONMETALS; PHYSICAL PROPERTIES; POINT DEFECTS; RESONANCE; SEMIMETALS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent