Material characterization of high aspect ratio silicon nitride diaphragms
Creators
- 1. Sandia National Labs., Albuquerque, NM (United States)
Description
Micromachined silicon nitride (Si3 + Na4 diaphragms were recently found to withstand differential pressures in excess of 600 psi (4.1 MPA), despite their very high length-to-thickness aspect ratios (l/t = 500). The square diaphragms are only 0.8 μm (0.00003 inch) thick, yet they span a relatively large are of 160,000 μ2. The diaphragms were made of low-stress silicon nitride deposited on silicon wafers using a Low Pressure Chemical Vapor Deposition (LPCVD) process. The substrate silicon was subsequently masked and anisotropically etched from beneath the thin film in square windows 400 μm on a side. The diaphragms were subjected to burst pressure testing, where they were found to exhibit much higher burst strengths that initially expected, some as high as 1305 psi (9.0 MPa). In this paper the diaphragms; mechanical properties are described as a function of material composition, diaphragm, size and processing parameters. These empirical results will also be compared with the predictions from a solid-modeling theoretical analysis
Additional details
Publishing Information
- Publisher
- The Metallurgical Society Inc.
- Imprint Place
- Warrendale, PA (United States)
- Imprint Title
- 1992 TMS annual meeting (Abstracts)
- Imprint Pagination
- vp.
- Journal Page Range
- p. C122.
Conference
- Title
- Minerals, Metals, and Materials Society (TMS) annual meeting and exhibition.
- Dates
- 1-5 Mar 1992.
- Place
- San Diego, CA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 23034438
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANISOTROPY; CHEMICAL COMPOSITION; CHEMICAL VAPOR DEPOSITION; CORRELATIONS; ETCHING; LOW PRESSURE; MATERIALS TESTING; MECHANICAL PROPERTIES; MICROELECTRONIC CIRCUITS; ORDER PARAMETERS; PROCESS CONTROL; SILICON NITRIDES; THIN FILMS
- Descriptors DEC
- CHEMICAL COATING; CONTROL; DEPOSITION; ELECTRONIC CIRCUITS; FILMS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SILICON COMPOUNDS; SURFACE COATING; TESTING
Optional Information
- Secondary number(s)
- CONF-920305--.