Diffusion and viscosity of Ga-In and Se-In melts

Calculated in the framework of rigid spheres liquid model atomic diffusion coefficients of Ga, In and small impurities ^108mAg in Ga-In melts in broad temperature and concentration interval are in agreement with experimental results. This let us conclude about unactivation monoatomic nature of diffusion in such systems. Viscosity η of this melts where calculated by utilizing improved formula of Stoks-Einstein. Acquired quantities are in good agreement with experimental results. Viscosity η of the system Se-In where also calculated by utilizing formula of Stoks-Einstein (using atomic diffusion coefficients of Se,In calculated in framework of rigid spheres model). But this quantities are not agreed with experimental results. This let us conclude about diffusion of Se,In not only in atomic form but also in the form of complexes, which consists of several atoms (the most probable form is GaIn₂). With temperature increase this complexes dissociates