Published December 31, 2003
| Version v1
Journal article
Weak localization of holes in acceptor-doped SiGe quantum wells
Description
Negative magnetoresistance is observed in boron-doped SiGe/Si quantum-well structures. The effect of a random potential caused by charged boron δ-layers in barriers on quantum corrections to the conductivity is observed and explained. Elastic and inelastic scattering times of holes as well as the magnitude of the random potential are determined
Additional details
Identifiers
- DOI
- 10.1016/j.physb.2003.09.226;
- PII
- S092145260300886X;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 340-342
- Journal Issue
- 3-4
- Journal Page Range
- p. 827-830
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 22. international conference on defects in semiconductors
- Dates
- 28 Jul - 1 Aug 2003
- Place
- Aarhus (Denmark)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37000682
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BORON; CORRECTIONS; DOPED MATERIALS; GERMANIUM; HOLES; INELASTIC SCATTERING; INTERMETALLIC COMPOUNDS; LAYERS; MAGNETORESISTANCE; POTENTIALS; QUANTUM WELLS; RANDOMNESS; SILICON
- Descriptors DEC
- ALLOYS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; MATERIALS; METALS; NANOSTRUCTURES; PHYSICAL PROPERTIES; SCATTERING; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.