Published 2008
| Version v1
Miscellaneous
The Electrical Characteristics of The N-Organic Semiconductor/P-Inorganic Semiconductor Diode
Description
n-organic semiconductor (PEDOT) / p-inorganic semiconductor Si diode was formed by deep coating method. The method has been achieved by coating n-inorganic semiconductor PEDOT on top of p-inorganic semiconductor. The n-organic semiconductor PEDOT/ p-inorganic semiconductor diode demonstrated rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The barrier height , ideality factor values were obtained as of 0.88 eV and 1.95 respectively. The diode showed non-ideal I-V behavior with an ideality factor greater than unity that could be ascribed to the interfacial layer
Additional details
Additional titles
- Original title (Turkish)
- Oezetler Kitabi
Publishing Information
- Imprint Title
- Book of Abstracts
- Imprint Pagination
- 764 p.
- Journal Page Range
- p. 439
- Report number
- INIS-TR--131
Conference
- Title
- 25. International Physics Congress of the Turkish Physical Society
- Original Conference Title
- Turk Fizik Dernegi 25. Uluslararasi Fizik Kongresi
- Dates
- 25-29 Aug 2008
- Place
- Bodrum (Turkey)
INIS
- Country of Publication
- Turkey
- Country of Input or Organization
- Turkey
- INIS RN
- 40109250
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, Numerical Data, Non-conventional Literature
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; EXPERIMENTAL DATA; LAYERS; ORGANIC SEMICONDUCTORS; SILICON DIODES; SURFACE TENSION
- Descriptors DEC
- DATA; ELECTRICAL PROPERTIES; INFORMATION; MATERIALS; NUMERICAL DATA; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SURFACE PROPERTIES
Optional Information
- Notes
- Imprint:Oezetler Kitabi