Published June 24, 2011 | Version v1
Journal article Metadata-only

Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer

Creators

  • 1. Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)
  • 2. Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China)

Description

The stabilization of the resistive switching characteristics is important to resistive random access memory (RRAM) device development. In this paper, an alternative approach for improving resistive switching characteristics in ZrO2-based resistive memory devices has been investigated. Compared with the Cu/ZrO2/Pt structure device, by embedding a thin TiOx layer between the ZrO2 and the Cu top electrode, the Cu/TiOx-ZrO2/Pt structure device exhibits much better resistive switching characteristics. The improvement of the resistive switching characteristics in the Cu/TiOx-ZrO2/Pt structure device might be attributed to the modulation of the barrier height at the electrode/oxide interfaces.

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/22/25/254028

Additional details

Identifiers

DOI
10.1088/0957-4484/22/25/254028;
PII
S0957-4484(11)70468-8;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
22
Journal Issue
25
Journal Page Range
[5 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43026848
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ELECTRODES; EQUIPMENT; FILMS; INTERFACES; LAYERS; MEMORY DEVICES; NANOSTRUCTURES; STABILIZATION; ZIRCONIUM OXIDES
Descriptors DEC
CHALCOGENIDES; OXIDES; OXYGEN COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZIRCONIUM COMPOUNDS