Published November 2015 | Version v1
Journal article Metadata-only

Fast joining SiC ceramics with Ti3SiC2 tape film by electric field-assisted sintering technology

Creators

  • 1. School of Materials Science and Engineering, Yeungnam University, Gyeongsan (Korea, Republic of)
  • 2. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo (China)

Description

Commercial SiC ceramics were joined by electric field-assisted sintering technology using a Ti3SiC2 (TSC) tape film. A SiC/TSC/SiC joining sample with bend strength of 80.4 MPa was obtained at a low joining temperature of 1300 °C within a total time of 15 min. Three simple failure mechanism models were established, and the failure mechanisms of the joints joined at different temperatures were then revealed. The element diffusion and phase transition behaviour in the joining interface were investigated.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jnucmat.2015.08.004

Additional details

Identifiers

DOI
10.1016/j.jnucmat.2015.08.004;
PII
S0022-3115(15)30144-6;

Publishing Information

Journal Title
Journal of Nuclear Materials
Journal Volume
466
Journal Page Range
p. 322-327
ISSN
0022-3115
CODEN
JNUMAM

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
48034557
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CERAMICS; ELECTRIC CURRENTS; ELECTRIC FIELDS; FAILURES; FILMS; JOINING; PHASE TRANSFORMATIONS; PRESSURE RANGE MEGA PA 10-100; SILICON CARBIDES; SINTERING; TITANIUM CARBIDES
Descriptors DEC
CARBIDES; CARBON COMPOUNDS; CURRENTS; FABRICATION; PRESSURE RANGE; PRESSURE RANGE MEGA PA; SILICON COMPOUNDS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Copyright
Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.