Published 2008
| Version v1
Miscellaneous
Open
Growth and properties of the ion beam deposited SiOx containing DLC films
Creators
- 1. Institute of Physical Electronics of Kaunas University of Technology, Kaunas (Lithuania)
- 2. Departament of Physics, Kaunas University of Technology, Kaunas (Lithuania)
Description
no abstract available
Files
40107953.pdf
Files
(36.2 kB)
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Additional details
Publishing Information
- Publisher
- Maria Curie-Sklodowska University, Lublin
- Imprint Place
- Lublin (Poland)
- Imprint Title
- Programme and abstracts of the seventh International Conference on Ion Implantation and other Applications of Ions and Electrons (ION 2008)
- Imprint Pagination
- 186 p.
- Journal Page Range
- p. 81
- Report number
- INIS-PL--2009-0011
Conference
- Title
- 7. International Conference on Ion Implantation and other Applications of Ions and Electrons
- Acronym
- ION 2008
- Dates
- 16-19 Jun 2008
- Place
- Kazimierz Dolny (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 40107953
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference
- Descriptors DEI
- DEPOSITION; DIAMONDS; ION BEAMS; PHYSICAL PROPERTIES; SILICON OXIDES; SILOXANES; THIN FILMS
- Descriptors DEC
- BEAMS; CARBON; CHALCOGENIDES; ELEMENTS; FILMS; MINERALS; NONMETALS; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS