Charged vacancy in graphene: Interplay between Landau levels and atomic collapse resonances
Creators
- 1. Key Laboratory of Micro-nano Sensing and IoT of Wenzhou, Wenzhou Institute of Hangzhou Dianzi University, Wenzhou 325038, China
- 2. School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, Zhejiang Province 310038, China
- 3. Departement Fysica, Universiteit Antwerpen, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium
- 4. NANOlab Center of Excellence, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium
- 5. Departamento de Física, Universidade Federal do Ceará, Caixa Postal 6030, Campus do Pici, 60455-760 Fortaleza, Ceará, Brazil
Description
The interplay between a magnetic field and the Coulomb potential from a charged vacancy on the electron states in graphene is investigated within the tight-binding model. The Coulomb potential removes locally Landau level degeneracy, while the vacancy introduces a satellite level next to the normal Landau level. These satellite levels are found throughout the positive-energy region, but in the negative-energy region, they turn into atomic collapse resonances. Crossings between Landau levels with different angular quantum number are found. Unlike the point impurity system in which an anticrossing occurs between Landau levels of the same , in this work anticrossing is found between the normal Landau level and the vacancy-induced level. The atomic collapse resonance hybridizes with the Landau levels. The charge at which the lowest Landau level crosses increases with enhancing magnetic field. A Landau level scaling anomaly occurs when the charge is larger than the critical charge and this critical charge is independent of the magnetic field.
Additional details
Identifiers
- DOI
- 10.1103/PhysRevB.109.104103;
- arXiv
- arXiv:2311.08064;
- Crossref Funder ID
- 10.13039/501100001809; 10.13039/501100007194;
Publishing Information
- Journal Title
- Physical Review B
- Journal Volume
- 109
- Journal Issue
- 10
- Journal Page Range
- 6 pgs.
- ISSN
- 1550-235X
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- COULOMB FIELD; D STATES; ELECTRIC CHARGES; ELECTRONS; GRAPHENE; HONEYCOMB STRUCTURES; HYBRIDIZATION; IMPURITIES; LEVELS; MAGNETIC FIELDS; POTENTIALS; RESONANCE; SCALING LAWS; VACANCIES
Optional Information
- Copyright
- ©2024 American Physical Society
- Contract/Grant/Project number
- 62004053; LY19F040006; L2023007
- Notes
- Contact Email: wangjing@hdu.edu.cn; Contact Email: francois.peeters@uantwerpen.be; Record automatically processed
- Funding organization
- National Natural Science Foundation of China; Wenzhou Municipal Science and Technology Bureau