Published March 22, 2005 | Version v1
Journal article

Characterization of CNx thin films prepared by close field unbalanced magnetron sputtering

  • 1. School of Information and Communication Engineering, Sungkyunkwan University, 300 ChunChun-Dong, Jangan Gu, Suwon 440-746 (Korea, Republic of) and Center for Advanced Plasma Surface Technology - CAPST, Sungkyunkwan University, 300 ChunChun-Dong, Jangan Gu, Suwon 440-746 (Korea, Republic of)
  • 2. Center for Advanced Plasma Surface Technology (CAPST), Sungkyunkwan University, 300 ChunChun-Dong, Jangan Gu, Suwon 440-746 (Korea, Republic of)
  • 3. School of Information and Communication Engineering, Sungkyunkwan University, 300 ChunChun-Dong, Jangan Gu, Suwon 440-746 (Korea, Republic of)

Description

Carbon nitride (CNx) film is a material that may successfully compete with DLC coatings, which have high hardness, high wear resistance and a low friction coefficient. Carbon nitride film was prepared on silicon substrate by Close Field UnBalanced Magnetron (CFUBM) sputtering with a graphite target and using nitrogen-argon mixture gas. Parameters were obtained on the deposition rate and investigated effect of total working pressure. The characteristic of the carbon nitride films was analyzed by Raman spectroscopy, energy dispersive X-ray (EDX) analysis, and atomic force microscopy (AFM). The tribological properties are also investigated by hardness measurement

Additional details

Identifiers

DOI
10.1016/j.tsf.2004.07.032;
PII
S0040-6090(04)00960-5;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
475
Journal Issue
1-2
Journal Page Range
p. 298-302
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
4. Asian-European international conference on plasma surface engineering
Dates
28 Sep - 3 Oct 2003
Place
Jeju City (Korea, Republic of)

Optional Information

Copyright
Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.