Published October 1975
| Version v1
Journal article
Anisotropy of H/sub c2/ and its implications to grain-boundary flux pinning in V3Si
Description
The anisotropy of H/sub c2/ was measured in a V3Si monocrystal and was found to be much larger than in other materials. The max elementary pinning force f/sub p/ is estimated to be approximately 0.01 dyn/cm at the reduced field H/H/sub c/ = 0.25 and 4.20K. Control of texture as well as of grain size is important for improving J/sub c/ in A-15 compounds
Additional details
Identifiers
- DOI
- 10.1063/1.321401;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 46
- Journal Issue
- 10
- Series
- J. Appl. Phys.
- Journal Page Range
- 4595-4596
- ISSN
- 0021-8979
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 7255078
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ANISOTROPY; CRITICAL FIELD; GRAIN BOUNDARIES; MAGNETIC FLUX; SUPERCONDUCTIVITY; TEXTURE; VANADIUM SILICIDES
- Descriptors DEC
- CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; MAGNETIC FIELDS; MICROSTRUCTURE; PHYSICAL PROPERTIES; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; VANADIUM COMPOUNDS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent