Published June 2014 | Version v1
Journal article

Design of PIN structure GaN-based α particle detector

  • 1. Jiangxi Engineering Research Center of Process and Equipment for Renewable Energy, East China Institute of Technology, Nanchang (China)
  • 2. Jiangxi Province Engineering Research Center of New Energy Technology and Equipment, East China Institute of Technology, Nanchang (China)

Description

According to Bragg formula and L.S.S theory, the calculation analyzes the range and energy loss of 241Am radioactive source in GaN and Ni/Au alloy material of device electrode in PIN structure, uses SRIM to simulate the range and energy loss of 241Am in GaN, and figures out the best thickness of I layer in PIN structure. It optimizes the design of PIN structure CaN-based α particle detector, and provides a theoretical basis and experimental reference data for MOCVD technology to prepare PIN structure GaN-based a particle detector. (authors)

Additional details

Publishing Information

Journal Title
Journal of East China Institute of Technology. Natural Science
Journal Volume
37
Journal Issue
2
Journal Page Range
p. 245-248
ISSN
1674-3504

Optional Information

Notes
3 figs., 1 tab., 8 refs.; http://dx.doi.org/10.3969/j.issn.1674-3504.2014.02.022