Constructing PbS quantum dot sensitized ZnO nanorod array photoelectrodes for highly efficient photovoltaic devices

Solar cells with ZnO film/ZnO nanorods (NRs)/PbS quantum dot (QD) photoelectrodes were constructed and various properties were studied. The ZnO NRs were grown for different periods varying from 0 (ZnO film) to 30 min (ZnO NR30) and the effect of growth period on the photovoltaic properties was investigated. The cell with ZnO film/PbS QD as photoelectrode showed the open circuit voltage V_OC of 0.59 V, short circuit current density J_SC of 10.06 mAcm^-2, and the power conversion efficiency of 3.29% under one sun illumination (air mass 1.5 global illumination at 100 mWcm^-2). In a device containing of ZnO film/ZnO NR10/PbS QD (as photoelectrode), mentioned photovoltaic parameters increased to 0.61 V, 10.47 mAcm^-2 and 3.81%, respectively. (author)