Published 1975
| Version v1
Report
Resistivity recovery of niobium and tantalum following 3 MeV-electron irradiation at 4.5 K
Description
The resistivity recovery following 3 MeV-electron irradiation at 4.50K was investigated on high-purity and impurity-doped niobium and tantalum. It is possible to separate intrinsic recovery stages from impurity induced ones
Additional details
Publishing Information
- Imprint Title
- Fundamental aspects of radiation damage in metals
- Imprint Pagination
- p. 459-462.
- Report number
- CONF-751006--P1
Conference
- Title
- International conference on radiation damage in metals.
- Dates
- 5 Oct 1975.
- Place
- Gatlinburg, Tennessee, USA.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 7275245
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRONS; MEV RANGE 01-10; NIOBIUM; PHYSICAL RADIATION EFFECTS; TANTALUM
- Descriptors DEC
- ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; LEPTONS; METALS; MEV RANGE; PHYSICAL PROPERTIES; RADIATION EFFECTS; TRANSITION ELEMENTS