Published March 15, 2009 | Version v1
Journal article

Effects of half-wave and full-wave power source on the anodic oxidation process on AZ91D magnesium alloy

  • 1. Key Laboratory of Aerospace Materials and Performance (Ministry of Education), School of Materials Science and Engineering, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China)

Description

Anodic films have been prepared on the AZ91D magnesium alloys in 1 mol/L Na2SiO3 with 10 vol.% silica sol addition under the constant voltage of 60 V at room temperature by half-wave and full-wave power sources. The weight of the anodic films has been scaled by analytical balance, and the thickness has been measured by eddy current instrument. The surface morphologies, chemical composition and structure of the anodic films have been characterized by scanning electron microscopy (SEM), energy dispersion spectrometry (EDS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The results show that the thickness and weight of the anodic films formed by the two power sources both increase with the anodizing time, and the films anodized by full-wave power source grow faster than that by half-wave one. Furthermore, we have fitted polynomial to the scattered data of the weight and thickness in a least-squares sense with MATLAB, which could express the growth process of the anodic films sufficiently. The full-wave power source is inclined to accelerate the growth of the anodic films, and the half-wave one is mainly contributed to the uniformity and fineness of the films. The anodic film consists of crystalline Mg2SiO4 and amorphous SiO2

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2008.12.082

Additional details

Identifiers

DOI
10.1016/j.apsusc.2008.12.082;
PII
S0169-4332(09)00002-6;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
255
Journal Issue
11
Journal Page Range
p. 5721-5728
ISSN
0169-4332
CODEN
ASUSEE

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.