Published March 31, 2015 | Version v1
Journal article

Oxygen atom diffusion-driven anomalous Hall behavior in Co/Pt multilayers

Description

Anomalous Hall effect (AHE) studies have been carried out in Co/Pt multilayers prepared by magnetron sputtering under annealing. The AHE behavior can be deteriorated by annealing in Pt/[Co/Pt]3/Pt thin films, while saturation anomalous Hall resistivity in MgO/[Co/Pt]3/MgO multilayers after annealing at 623 K for 30 min is 124% larger than that in the as-deposited films. The X-ray photoelectron spectroscopy analysis exhibits that the increased AHE is primarily ascribed to annealing dependent oxygen atom diffusion at the Co/MgO interface. - Highlights: • The electronic transport properties in Co/Pt multilayers were studied. • The chemical states were investigated by X-ray photoelectron spectroscopy. • Oxygen atom diffusion has an effect on anomalous Hall effect in Co/Pt multilayers

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2015.02.064

Additional details

Identifiers

DOI
10.1016/j.tsf.2015.02.064;
PII
S0040-6090(15)00192-3;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
579
Journal Page Range
p. 123-126
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.