Published 1994 | Version v1
Journal article

Media effect on charge carriers scattering in a thin semiconducting wire

Description

The effect of difference of dielectric constants of a size-quantized wire and surrounding media on the momentum relaxation time and mobility of charge carriers is considered in their scattering on the non screened coulomb impurity centers. The analytic expressions for the momentum relaxation rate and mobility are obtained for various cases of space distribution of impurity centers (background and remote impurities, uniform distribution of impurities), and also the temperature and concentration dependences of mobility are found. 11 refs

Additional details

Additional titles

Original title (Russian)
Влияние среды на примесное рассеяние носителей заряда в тонкой полупроводниковой проволоке

Publishing Information

Journal Title
Izvestiya National'noj Akademii Nauk Armenii. Fizika
Journal Volume
29
Journal Issue
3
Journal Page Range
p. 73-81
ISSN
1025-5613
CODEN
IAAFF8

INIS

Country of Publication
Armenia
Country of Input or Organization
Armenia
INIS RN
32048018
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CARRIER MOBILITY; CHARGE CARRIERS; RELAXATION TIME; SEMICONDUCTOR MATERIALS; WIRES
Descriptors DEC
MATERIALS; MOBILITY