Published 1994
| Version v1
Journal article
Media effect on charge carriers scattering in a thin semiconducting wire
Description
The effect of difference of dielectric constants of a size-quantized wire and surrounding media on the momentum relaxation time and mobility of charge carriers is considered in their scattering on the non screened coulomb impurity centers. The analytic expressions for the momentum relaxation rate and mobility are obtained for various cases of space distribution of impurity centers (background and remote impurities, uniform distribution of impurities), and also the temperature and concentration dependences of mobility are found. 11 refs
Additional details
Additional titles
- Original title (Russian)
- Влияние среды на примесное рассеяние носителей заряда в тонкой полупроводниковой проволоке
Publishing Information
- Journal Title
- Izvestiya National'noj Akademii Nauk Armenii. Fizika
- Journal Volume
- 29
- Journal Issue
- 3
- Journal Page Range
- p. 73-81
- ISSN
- 1025-5613
- CODEN
- IAAFF8
INIS
- Country of Publication
- Armenia
- Country of Input or Organization
- Armenia
- INIS RN
- 32048018
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CARRIER MOBILITY; CHARGE CARRIERS; RELAXATION TIME; SEMICONDUCTOR MATERIALS; WIRES
- Descriptors DEC
- MATERIALS; MOBILITY