Published February 28, 2008 | Version v1
Journal article

Re-entrant spin-glass behaviour in CeAu2Si2

  • 1. Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313 (Japan)
  • 2. Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)
  • 3. Tsukuba Magnet Laboratory, National Institute for Materials Science, 3-13 Sakura, Tsukuba 305-0003 (Japan)

Description

We present the results of ac and dc susceptibility, magnetic relaxation, specific heat and electrical resistivity measurements on a well-annealed tetragonal ThCr2Si2-type compound CeAu2Si2. These data provide clear evidence for the formation of spin glass state in this system at about Tf ∼ 2.2 K much lower than its Neel temperature TN = 10 K. The mechanism of the observed re-entrant spin-glass behaviour in CeAu2Si2 is discussed by comparing the present results with those reported for the analogue compounds URh2Ge2 and PrAu2Si2

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jallcom.2007.04.109

Additional details

Identifiers

DOI
10.1016/j.jallcom.2007.04.109;
PII
S0925-8388(07)00933-4;

Publishing Information

Journal Title
Journal of Alloys and Compounds
Journal Volume
451
Journal Issue
1-2
Journal Page Range
p. 461-463
ISSN
0925-8388
CODEN
JALCEU

Conference

Title
6. international conference on f-elements
Acronym
ICFE-6
Dates
4-9 Sep 2006
Place
Wroclaw (Poland)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39060770
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; CERIUM ALLOYS; ELECTRIC CONDUCTIVITY; GOLD ALLOYS; MAGNETIC SUSCEPTIBILITY; NEEL TEMPERATURE; SILICON ALLOYS; SPECIFIC HEAT; SPIN GLASS STATE; TETRAGONAL LATTICES
Descriptors DEC
ALLOYS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; HEAT TREATMENTS; MAGNETIC PROPERTIES; PHYSICAL PROPERTIES; RARE EARTH ALLOYS; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT ALLOYS; TRANSITION TEMPERATURE

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.