Published December 1990 | Version v1
Journal article Metadata-only

Investigation of single event upset subject to protons of intermediate energy range

Creators

  • 1. Rikkyo Univ., Yokosuka, Kanagawa (Japan). Inst. for Atomic Energy
  • 2. Tsukuba Space Center, NASDA, 2-1-1, Sengen, Tsukuba, Ibaragi 305 (Japan)
  • 3. Inst. for Nuclear Energy, Univ. of Tokyo, 3-2-1 Midoricho, Tanashi, Tokyo 188 (Japan)
  • 4. Century Research Center Corp., Tokyo (Japan)
  • 5. NEC Corp., 4035 Ikebecho, Midoriku, Yokohama, Kanagawa 226 (Japan)
  • 6. Toshiba Corp., Kawasaki (Japan)
  • 7. Fujitsu Labs. Ltd., Kawasaki, Kanagawa (Japan)
  • 8. Reliability Center for Electonic Components of Japan, 3-4-13 Nihonbashi, Chuoku, Tokyo 103 (Japan)

Description

Nuclear reaction models to reproduce p + Si nuclear reactions precisely in the incident proton energy region of below 50 MeV were investigated, and a computer code based on exciton models was developed. Si irradiation experiments in the intermediate energy region were performed to measure energy deposit by p + Si nuclear reactions, with two totally depleted Si detectors in face-to-face arrangement. Coincident signals were analyzed by a two dimensional pulse height analyzer. This method is shown to be effective in discriminating signals of contaminating particles

Additional details

Publishing Information

Journal Title
IEEE Transactions on Nuclear Science
Journal Volume
37
Journal Issue
6
Series
IEEE Trans. Nucl. Sci.
Journal Page Range
1953-1960
ISSN
0018-9499
CODEN
IETNA

Conference

Title
27. IEEE annual conference on nuclear and space radiation effects.
Dates
16-20 Jul 1990.
Place
Reno, NV (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
22056377
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
COINCIDENCE METHODS; COMPUTER CODES; CORRELATIONS; ENERGY DEPENDENCE; MEV RANGE 10-100; NUCLEAR REACTIONS; PHYSICAL RADIATION EFFECTS; PROTONS; PULSES; SI SEMICONDUCTOR DETECTORS; SIGNALS; SILICON
Descriptors DEC
BARYONS; CATIONS; CHARGED PARTICLES; COUNTING TECHNIQUES; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; HADRONS; HYDROGEN IONS; HYDROGEN IONS 1 PLUS; IONS; MEASURING INSTRUMENTS; MEV RANGE; NUCLEONS; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTOR DETECTORS; SEMIMETALS

Optional Information

Secondary number(s)
CONF-900723--.