Published June 2, 2014
| Version v1
Journal article
Continuous operation of a monolithic semiconductor terahertz source at room temperature
- 1. Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208 (United States)
Description
We demonstrate room temperature continuous wave THz sources based on intracavity difference-frequency generation from mid-infrared quantum cascade lasers. Buried ridge, buried composite distributed-feedback waveguide with Čerenkov phase-matching scheme is used to reduce the waveguide loss and enhance the heat dissipation for continuous wave operation. Continuous emission at 3.6 THz with a side-mode suppression ratio of 20 dB and output power up to 3 μW are achieved, respectively. THz peak power is further scaled up to 1.4 mW in pulsed mode by increasing the mid-infrared power through increasing the active region doping and device area.
Additional details
Identifiers
- DOI
- 10.1063/1.4881182;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 104
- Journal Issue
- 22
- Journal Page Range
- p. 221105-221105.5
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46006271
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- COOLING; EMISSION; ENERGY LOSSES; FEEDBACK; HEAT TRANSFER; LASER RADIATION; OPERATION; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0273-0400 K; THERMAL DIFFUSIVITY; THERMAL EFFLUENTS; THZ RANGE; WAVEGUIDES
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; ENERGY TRANSFER; FREQUENCY RANGE; LOSSES; MATERIALS; PHYSICAL PROPERTIES; RADIATIONS; TEMPERATURE RANGE; THERMODYNAMIC PROPERTIES
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC