Published February 2011
| Version v1
Journal article
Design of SRAM single event effect monitoring system
Creators
- 1. Graduate University of Chinese Academy of Sciences, Beijing (China)
- 2. Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou (China)
Description
The SRAM single event effect monitoring system, which is composed of a daughter board, a mother board and a control computer, is used for single event effect experiments in Irradiation Terminal of the Heavy Ion Research Facility in Lanzhou (HIRFL). It briefly analysis single event effect in SRAM, and then describe hardware components, software system and performance index in details. This system have detected single event upset and single event latch-up of IDT71256 many times in radiation experiments, and the experimental data are basically consistent with expectations, verifying the reliability of this system. (authors)
Additional details
Publishing Information
- Journal Title
- Nuclear Electronics and Detection Technology
- Journal Volume
- 31
- Journal Issue
- 2
- Journal Page Range
- p. 209-213
- ISSN
- 0258-0934
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 45105320
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- COMPUTER CODES; COMPUTERS; DESIGN; EXPERIMENTAL DATA; HEAVY IONS; HIRFL CYCLOTRON; IRRADIATION; MONITORING; PARTICLES; PHYSICAL RADIATION EFFECTS; RELIABILITY
- Descriptors DEC
- ACCELERATORS; CHARGED PARTICLES; CYCLIC ACCELERATORS; CYCLOTRONS; DATA; HEAVY ION ACCELERATORS; INFORMATION; IONS; ISOCHRONOUS CYCLOTRONS; NUMERICAL DATA; RADIATION EFFECTS
Optional Information
- Notes
- 7 figs., 1 tabs., 7 refs.