Published May 1991
| Version v1
Journal article
Secondary ion mass spectrometry analysis of aluminum films: Relative sensitivity factors and analytical considerations
Creators
- 1. AT ampersand T Bell Laboratories, 555 Union Boulevard, Allentown, Pennsylvania 18103 (USA)
- 2. AT ampersand T Microelectronics, 9333 South John Young Parkway, Orlando, Florida 32819 (USA)
Description
Relative sensitivity factors (RSFs) have been measured for 20 elements in sputter deposited aluminum films using oxygen and cesium primary beams. E+, EAl+, EO+, and EAl O+ (where E is the element) were monitored for oxygen bombardment, and E-, EAl-, ECs-, and EAl Cs- for cesium bombardment. The results follow the RSF patterns observed for other matrices. Depth resolution degradation due to nonuniform sputtering of aluminum was examined. Oxygen bombardment produced smoother craters than cesium bombardment; sputtering rate and aluminum deposition temperature were also found to affect crater topography. The effect of surface oxygen on depth profiles has also been studied
Additional details
Publishing Information
- Journal Title
- Journal of Vacuum Science and Technology, A
- Journal Volume
- 9
- Journal Issue
- 3
- Series
- J. Vac. Sci. Technol., A.
- Journal Page Range
- 1385-1389
- ISSN
- 0734-2101
- CODEN
- JVTAD
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22074195
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM; ATOM COLLISIONS; ATOMIC BEAMS; CESIUM; CRATERS; MORPHOLOGICAL CHANGES; OXYGEN; SENSITIVITY ANALYSIS; SPUTTERING; THIN FILMS
- Descriptors DEC
- ALKALI METALS; BEAMS; CAVITIES; COLLISIONS; ELEMENTS; FILMS; METALS; NONMETALS