Published December 2008
| Version v1
Journal article
Effect of Te on the self-activated emission of ZnSe
Creators
- 1. Moscow Power Engineering Institute (Technical University) (Russian Federation)
Description
An interpretation of the optical properties of ZnSe is suggested. The interpretation is based on the anticrossing band theory, which specifies the oxygen-induced splitting of the conduction band. It is shown that the new approach provides a means for understanding the specific features of the self-activated luminescence in ZnSe:O and (ZnSe:O):Te. The effect of small (<1%) Te additives on the luminescence of ZnSe:Te in the edge spectral region is interpreted. The model of electronic transitions is presented.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 42
- Journal Issue
- 13
- Journal Page Range
- p. 1499-1502
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41006170
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BAND THEORY; LUMINESCENCE; OPTICAL PROPERTIES; OXYGEN; TELLURIUM; ZINC SELENIDES
- Descriptors DEC
- CHALCOGENIDES; ELEMENTS; EMISSION; NONMETALS; PHOTON EMISSION; PHYSICAL PROPERTIES; SELENIDES; SELENIUM COMPOUNDS; SEMIMETALS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2008 Pleiades Publishing, Ltd.