Published September 21, 2014 | Version v1
Journal article

Luminescence and superradiance in electron-beam-excited AlxGa1−xN

  • 1. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 13, Lavrentieva av., Novosibirsk 630090 (Russian Federation)
  • 2. Novosibirsk State University, 2 Pirogova Str., Novosibirsk 630090 (Russian Federation)
  • 3. Institute of Electrophysics, Ural Division of the Russian Academy of Sciences, 106, Amundsen str., Ekaterinburg 620016 (Russian Federation)

Description

Luminescence and superradiance characteristics of 0.5–1.2-μm thick AlxGa1−xN films grown by molecular-beam epitaxy on sapphire substrates were studied under excitation of the films with low-energy (<20 keV) and high-energy (170 keV) electron beams. In both cases, the luminescence spectra looked quite similarly; they exhibited a band-edge luminescence with x-dependent wavelength ranging from 365 nm to 310 nm and a broadband emission taking over the whole visible spectral region. Superradiance within the broad band was obtained by pumping the samples with powerful an electron beam in the form of an open-discharge-generated filament.

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
116
Journal Issue
11
Journal Page Range
p. 113103-113103.6
ISSN
0021-8979
CODEN
JAPIAU

Optional Information

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