Published June 1, 1979 | Version v1
Journal article Metadata-only

GaAs-Al/sub x/Ga/sub 1-x/As strip-buried-heterostructure lasers with lateral-evanescent-field distributed feedback

Creators

  • 1. Bell Laboratories, Murray Hill, New Jersey 07974

Description

A GaAs-Al/sub x/Ga/sub 1-x/As strip-buried-heterostructure laser with distributed feedback provided through lateral-evanescent-field-grating interaction is demonstrated. The diode is shown to operate stably in single transverse (fundamental) and longitudinal modes up to about 3 x I/sub th/ over a temperature range 0--36 0C under pulsed operation. The light-current characteristics of these lasers exhibit the characteristic linearity of conventional strip-buried heterostructure lasers

Additional details

Publishing Information

Journal Title
Appl. Phys. Lett.
Journal Volume
34
Journal Issue
11
Series
Appl. Phys. Lett.
Journal Page Range
752-755
ISSN
0003-6951

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
10480389
Subject category
S42: ENGINEERING;
Descriptors DEI
ALUMINIUM COMPOUNDS; ELECTRIC FIELDS; FEEDBACK; GALLIUM ARSENIDES; INTERACTIONS; OSCILLATION MODES; PULSES; SEMICONDUCTOR DIODES; SEMICONDUCTOR LASERS; STABILITY; TEMPERATURE DEPENDENCE
Descriptors DEC
AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; LASERS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS