Published November 2017 | Version v1
Journal article

Inverse spin Hall and spin rectification effects in NiFe/FeMn exchange-biased thin films

  • 1. Departamento de Física, UFSM, Santa Maria, 97105-900 Rio Grande do Sul (Brazil)

Description

Highlights: • Inverse spin Hall and spin rectification effects in exchange biased thin films. • Two protocols enable discrimination between inverse spin Hall and spin rectification. • Studied system may be suitable for broadband communication applications. - Abstract: Materials presenting high spin-orbit coupling are able to convert spin currents in charge currents. The phenomenon, known as inverse spin Hall effect, promises to revolutionize spintronic technology enabling the electrical detection of spin currents. It has been observed in a variety of systems, usually non-magnetic metals. We study the voltage emerging in exchange biased Ta/NiFe/FeMn/Ta thin films near the ferromagnetic resonance. Measured signals are related to both inverse spin Hall and spin rectification effects, and two distinct protocols were employed to separate their contributions.The curve shift due to the exchange bias effect may enable high frequency applications without an external applied magnetic field.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jmmm.2017.06.001

Additional details

Identifiers

DOI
10.1016/j.jmmm.2017.06.001;
PII
S0304885317310557;

Publishing Information

Journal Title
Journal of Magnetism and Magnetic Materials
Journal Volume
441
Journal Page Range
p. 392-397
ISSN
0304-8853
CODEN
JMMMDC

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
51055564
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
FERROMAGNETIC RESONANCE; L-S COUPLING; MAGNETIC FIELDS; SPIN; THIN FILMS
Descriptors DEC
ANGULAR MOMENTUM; COUPLING; FILMS; INTERMEDIATE COUPLING; MAGNETIC RESONANCE; PARTICLE PROPERTIES; RESONANCE

Optional Information

Notes
© 2017 Elsevier B.V.