Inverse spin Hall and spin rectification effects in NiFe/FeMn exchange-biased thin films
- 1. Departamento de Física, UFSM, Santa Maria, 97105-900 Rio Grande do Sul (Brazil)
Description
Highlights: • Inverse spin Hall and spin rectification effects in exchange biased thin films. • Two protocols enable discrimination between inverse spin Hall and spin rectification. • Studied system may be suitable for broadband communication applications. - Abstract: Materials presenting high spin-orbit coupling are able to convert spin currents in charge currents. The phenomenon, known as inverse spin Hall effect, promises to revolutionize spintronic technology enabling the electrical detection of spin currents. It has been observed in a variety of systems, usually non-magnetic metals. We study the voltage emerging in exchange biased Ta/NiFe/FeMn/Ta thin films near the ferromagnetic resonance. Measured signals are related to both inverse spin Hall and spin rectification effects, and two distinct protocols were employed to separate their contributions.The curve shift due to the exchange bias effect may enable high frequency applications without an external applied magnetic field.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jmmm.2017.06.001Additional details
Identifiers
- DOI
- 10.1016/j.jmmm.2017.06.001;
- PII
- S0304885317310557;
Publishing Information
- Journal Title
- Journal of Magnetism and Magnetic Materials
- Journal Volume
- 441
- Journal Page Range
- p. 392-397
- ISSN
- 0304-8853
- CODEN
- JMMMDC
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51055564
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- FERROMAGNETIC RESONANCE; L-S COUPLING; MAGNETIC FIELDS; SPIN; THIN FILMS
- Descriptors DEC
- ANGULAR MOMENTUM; COUPLING; FILMS; INTERMEDIATE COUPLING; MAGNETIC RESONANCE; PARTICLE PROPERTIES; RESONANCE
Optional Information
- Notes
- © 2017 Elsevier B.V.