TCAD silicon device simulation for high level of radiation damage

Silicon detectors are expected to experience an unprecedented radiation flux in the future upgrades of the detectors at the Large Hadron Collider (LHC). The challenging radiation environment of these experiments will severely affect the performance of such detectors, degrading their detection capabilities and imposing severe operational conditions. The modeling of the detectors through Monte Carlo simulation represents a necessary step for the detailed understanding of the silicon detector performance before and after radiation damage; also for setting up optimized design rules aiming to mitigate the detrimental effect of the radiation damage. In the present work, a comparison of simulation results, obtained from- Technology Computer-Aided Design (TCAD) simulation software: Silvaco and Synopsys- used to predict silicon detectors performance, is presented. The effects of radiation damage are incorporated in the TCADs, using an effective multiple traps model. A systematic study of the sensitivity of the silicon detector's macroscopic parameters to the modeling of traps is performed. The simulation results for static electrical parameters, such as the leakage current and the full depletion voltage, obtained by the TCADs are presented and compared.