Published May 18, 2015 | Version v1
Journal article

Influence of surface charge on the transport characteristics of nanowire-field effect transistors in liquid environments

  • 1. Institute for Materials Science and Max Bergmann Center of Biomaterials, TU Dresden, 01062 Dresden (Germany)
  • 2. Theoretical Chemistry, Department of Chemistry and Food Chemistry, TU Dresden, 01062 Dresden (Germany)
  • 3. Center for Advancing Electronics Dresden (cfAED), TU Dresden, 01062 Dresden (Germany)
  • 4. Dresden Center for Computational Materials Science (DCCMS), TU Dresden, 01062 Dresden (Germany)

Description

One dimensional nanowire field effect transistors (NW-FETs) are a promising platform for sensor applications. The transport characteristics of NW-FETs are strongly modified in liquid environment due to the charging of surface functional groups accompanied with protonation or deprotonation. In order to investigate the influence of surface charges and ionic concentrations on the transport characteristics of Schottky-barrier NW-FETs, we have combined the modified Poisson-Boltzmann theory with the Landauer-Büttiker transport formalism. For a typical device, the model is able to capture the reduction of the sensitivity of NW-FETs in ionic solutions due to the screening from counter ions as well as a local gating from surface functional groups. Our approach allows to model, to investigate, and to optimize realistic Schottky-barrier NW-FET devices in liquid environment

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
106
Journal Issue
20
Journal Page Range
p. 203104-203104.5
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46108225
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
CHARGE TRANSPORT; FIELD EFFECT TRANSISTORS; LIQUIDS; MATHEMATICAL SOLUTIONS; NANOWIRES; SENSORS; SURFACES
Descriptors DEC
FLUIDS; NANOSTRUCTURES; SEMICONDUCTOR DEVICES; TRANSISTORS

Optional Information

Notes
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