Influence of surface charge on the transport characteristics of nanowire-field effect transistors in liquid environments
- 1. Institute for Materials Science and Max Bergmann Center of Biomaterials, TU Dresden, 01062 Dresden (Germany)
- 2. Theoretical Chemistry, Department of Chemistry and Food Chemistry, TU Dresden, 01062 Dresden (Germany)
- 3. Center for Advancing Electronics Dresden (cfAED), TU Dresden, 01062 Dresden (Germany)
- 4. Dresden Center for Computational Materials Science (DCCMS), TU Dresden, 01062 Dresden (Germany)
Description
One dimensional nanowire field effect transistors (NW-FETs) are a promising platform for sensor applications. The transport characteristics of NW-FETs are strongly modified in liquid environment due to the charging of surface functional groups accompanied with protonation or deprotonation. In order to investigate the influence of surface charges and ionic concentrations on the transport characteristics of Schottky-barrier NW-FETs, we have combined the modified Poisson-Boltzmann theory with the Landauer-Büttiker transport formalism. For a typical device, the model is able to capture the reduction of the sensitivity of NW-FETs in ionic solutions due to the screening from counter ions as well as a local gating from surface functional groups. Our approach allows to model, to investigate, and to optimize realistic Schottky-barrier NW-FET devices in liquid environment
Additional details
Identifiers
- DOI
- 10.1063/1.4921401;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 106
- Journal Issue
- 20
- Journal Page Range
- p. 203104-203104.5
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46108225
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CHARGE TRANSPORT; FIELD EFFECT TRANSISTORS; LIQUIDS; MATHEMATICAL SOLUTIONS; NANOWIRES; SENSORS; SURFACES
- Descriptors DEC
- FLUIDS; NANOSTRUCTURES; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC