Published May 20, 2005
| Version v1
Journal article
Electron-Beam-Induced Disordering of the Si(001)-c(4x2) Surface Structure
- 1. Department of Molecular and Material Sciences, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan)
- 2. PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama (Japan)
Description
An electron beam (EB) irradiation effect on the Si(001)-c(4x2) surface was investigated by using low-energy electron diffraction. Quarter-order spots become dim and streaky by EB irradiation below ∼40 K, indicating a disordering in the c(4x2) arrangement of buckled dimers. A quantitative analysis of decreasing rates of the spot intensity at various conditions of beam current, beam energy, and substrate temperature leads to a proposal for a mechanism of the disordering in the buckled-dimer arrangement in terms of electronic excitation, electron-phonon coupling, and carrier concentration
Additional details
Identifiers
Publishing Information
- Journal Title
- Physical Review Letters
- Journal Volume
- 94
- Journal Issue
- 19
- Journal Page Range
- p. 195502-195502.4
- ISSN
- 0031-9007
- CODEN
- PRLTAO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37012200
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BEAM CURRENTS; CARRIER DENSITY; DIMERS; ELECTRON BEAMS; ELECTRON DIFFRACTION; ELECTRON-PHONON COUPLING; EXCITATION; IRRADIATION; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; SURFACE PROPERTIES
- Descriptors DEC
- BEAMS; COHERENT SCATTERING; COUPLING; CURRENTS; DIFFRACTION; ELEMENTS; ENERGY-LEVEL TRANSITIONS; LEPTON BEAMS; MATERIALS; PARTICLE BEAMS; SCATTERING; SEMIMETALS
Optional Information
- Notes
- (c) 2005 The American Physical Society