Published March 17, 2008 | Version v1
Journal article

Tunneling magnetoresistance in Fe-oxide film

  • 1. Department of Physics and Chemistry and Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (China)
  • 2. National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China)
  • 3. Department of Physics and Chemistry and Institute of Nano Science and Technology, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (China)

Description

We fabricate Fe/Fe oxide granular film by DC sputtering and study the magnetic and transport properties in the insulator region. X-ray photoelectron spectroscopy and transmission electron microscopy confirm the coexistence of iron and Fe2O3. Accompanied with the nonlinear I-V curve and magnetic measurement, we investigate mechanism of sizable magnetoresistance in detail and found the spin in the interface has crucial contribution to the spin tunneling process

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physleta.2007.11.002

Additional details

Identifiers

DOI
10.1016/j.physleta.2007.11.002;
PII
S0375-9601(07)01589-7;

Publishing Information

Journal Title
Physics Letters. A
Journal Volume
372
Journal Issue
12
Journal Page Range
p. 2118-2122
ISSN
0375-9601
CODEN
PYLAAG

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.