Published September 1997 | Version v1
Journal article

Characterization of sputtered barium strontium titanate and strontium titanate-thin films

  • 1. Materials Research and Strategic Technologies, Motorola Semiconductor Products Sector, 2200 W. Broadway Road, Mail Drop M360, Mesa, Arizona 85202 (United States)
  • 2. Advanced Materials Group, Materials Research and Strategic Technologies, 3501 Ed Bluestein Boulevard, Mail Drop K10, Austin, Texas 78721 (United States)
  • 3. Matsushita Electronics Corporation, Electronics Research Laboratory, Corporate Technology Center, Takatsuki, Osaka, 569 (Japan)
  • 4. Chiba Institute for Super Materials, Ulvac Japan, 523 Yokota Sanbu-Machi Sanbu-Gun, Chiba Prefecture, 289-12 (Japan)

Description

Sputtered Ba1-xSrxTiO3 (BST) and SrTiO3 (STO) films and capacitors made with these dielectrics have been characterized with respect to physical and electrical properties. Specific capacitance values included a high of 96fF/μm2 for BST films deposited of 600 degree C and a high of 26fF/μm2 for STO films deposited at 400 degree C. Leakage current densities at 3.3 V for the most part varied from mid 10-8 to mid 10-6A/cm2. All of the dielectrics are polycrystalline, although the lowest temperature STO films have a nearly amorphous layer which impacts their capacitance. Grain size increases with deposition temperature, which correlates to higher dielectric constants. The lattice parameter of the BST films is larger than that of bulk samples. Capacitance, leakage, breakdown, and lifetime results are reported. copyright 1997 American Institute of Physics

Additional details

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
82
Journal Issue
5
Journal Page Range
p. 2558-2566.
ISSN
0021-8979
CODEN
JAPIAU