Published 1986
| Version v1
Book
Liquid semiconductors
Creators
Description
This paper analyzes the state of the art in the investigation of the semiconductor-metal transition in liquid semi-conductors. The development of Ioffe's ideas are reviewed. The concept of minimum metallic conductivity in disordered systems and the doping effects in liquid semiconductors are discussed. The electrical conductivity and Hall effect for molten semiconductors Te, PbTe, SnTe, GeTe, Bi2Te3, Sb2Te3, Ga2Te3, and InTe3 are shown
Additional details
Publishing Information
- Publisher
- Consultants Bureau.
- Imprint Place
- New York, NY (USA)
- Imprint Title
- Semiconductor physics
- Journal Page Range
- p. 129-142.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 18045491
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANTIMONY TELLURIDES; BAND THEORY; BISMUTH TELLURIDES; CRYSTAL DOPING; ELECTRIC CONDUCTIVITY; GALLIUM TELLURIDES; GERMANIUM TELLURIDES; HALL EFFECT; IMPURITIES; INDIUM TELLURIDES; LEAD TELLURIDES; LIQUID CRYSTALS; LIQUID METALS; LIQUIDS; METALLURGY; ORDER-DISORDER TRANSFORMATIONS; SEMICONDUCTOR MATERIALS; TELLURIUM; TEMPERATURE DEPENDENCE; TIN TELLURIDES
- Descriptors DEC
- ANTIMONY COMPOUNDS; BISMUTH COMPOUNDS; CHALCOGENIDES; CRYSTALS; ELECTRICAL PROPERTIES; ELEMENTS; FLUIDS; GALLIUM COMPOUNDS; GERMANIUM COMPOUNDS; INDIUM COMPOUNDS; LEAD COMPOUNDS; MATERIALS; METALS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; SEMIMETALS; TELLURIDES; TELLURIUM COMPOUNDS; TIN COMPOUNDS