Published February 1, 2011 | Version v1
Journal article

Synergy of Nuclear and Electronic Energy Losses in Ion-irradiation Processes: the Case of Vitreous Silicon Dioxide

  • 1. CEA-CNRS-ENSICAEN-University of Caen (France)
  • 2. Oak Ridge National Laboratory, TN (United States)
  • 3. University of Tennessee, Knoxville, TN (United States)
  • 4. Pacific Northwest National Laboratory, Richland, WA (United States)
  • 5. Australian National University, Canberra (Australia)
  • 6. Peking University, Beijing (China)

Description

Structural modification of vitreous SiO2 by Au ion irradiation is investigated over an energy regime (∼ 0.3-15 MeV) where the decrease of the nuclear energy loss with increasing energy is compensated by the increase of the electronic energy loss, leading to a nearly constant total energy loss of ∼ 4 keV/nm. The radii of damaged zones resulting from the ion impact, deduced from changes in infrared bands as a function of ion fluence, decrease from 4.9 nm at 0.3 MeV to 2.5 and 2.6 nm at 9.8 MeV and 14.8 MeV, respectively. Based on previous data where vitreous SiO2 was irradiated with much higher energy Au ions, the damage zone radius increases from 2.4 nm at 22.7 MeV to 5.4 nm at 168 MeV, and a U-shaped dependence on energy within experimental uncertainty is observed in the energy region from 0.3 MeV to 168 MeV. The current results demonstrate that large damage radii at low and high ion energy can be explained by the elastic or inelastic thermal spike model, respectively. In the transition regime where both nuclear and electronic energy loss are significant, an unified thermal spike model consisting a coherent synergy of the elastic collision spike model with the inelastic thermal spike model is suggested to interpret and describe the radius evolution from the nuclear to the electronic energy regime.

Additional details

Identifiers

Publishing Information

Journal Title
Physical Review. B, Condensed Matter and Materials Physics
Journal Volume
83
Journal Issue
5
Journal Page Range
p. 054106
ISSN
1098-0121

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
42031846
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ENERGY LOSSES; FORMATION DAMAGE; GOLD IONS; IRRADIATION; MODIFICATIONS; SILICON; SILICON OXIDES; THERMAL SPIKES
Descriptors DEC
CHALCOGENIDES; CHARGED PARTICLES; ELEMENTS; IONS; LOSSES; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS

Optional Information

Contract/Grant/Project number
KC0201020; ERKCM76; AC05-00OR22725
Notes
doi 10.1103/PhysRevB.83.054106
Funding organization
SC USDOE - Office of Science (United States)