Published June 2017 | Version v1
Journal article

Influence of the growth method on the photoluminescence spectra and electronic properties of CuInS2 single crystals

  • 1. Department of Physics, SUPA, Strathclyde University, G4 0NG Glasgow (United Kingdom)
  • 2. Scientific-Practical material Research Centre of the National Academy of Sciences of Belarus, P.Brovki 19, 220072 Minsk (Belarus)
  • 3. Institute of Solid State Chemistry of the Urals Branch of the Russian Academy of Scienses, Ekaterinburg 620990 (Russian Federation)
  • 4. Ural Federal University, Ekaterinburg 620002 (Russian Federation)

Description

A comparative analysis of free and bound excitons in the photoluminescence (PL) spectra of CuInS2 single crystals grown by the traveling heater (THM) and the chemical vapor transport (CVT) methods is presented. The values of the binding energy of the A free exciton (18.5 and 19.7 meV), determined by measurements of the spectral positions of the ground and excited states, allowed the Bohr radii (3.8 and 3.7 nm), bandgaps (1.5536 and 1.5548 eV) and dielectric constants (10.2 and 9.9) to be calculated for CuInS2 crystals grown by THM and CVT, respectively.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jlumin.2017.02.014

Additional details

Identifiers

DOI
10.1016/j.jlumin.2017.02.014;
PII
S0022-2313(16)31566-6;

Publishing Information

Journal Title
Journal of Luminescence
Journal Volume
186
Journal Page Range
p. 123-126
ISSN
0022-2313
CODEN
JLUMA8

Optional Information

Copyright
Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.