Published December 1995
| Version v1
Journal article
SEE results using high energy ions
- 1. CERT-ONERA, Toulouse (France)
- 2. CNES, Toulouse (France)
- 3. CEN Saclay, Gif-sur-Yvette (France)
Description
SEE data on SRAMs and DRAMs, obtained with low and high energy ions, are presented. The global response of these devices remained coherent using low or high energy beams (angle effects, pattern influences, multiple-bit error proportion), but, discrepancies appeared, in some cases, in the threshold part of the sensitivity curves. These anomalies seem in relation with a track structure
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 42
- Journal Issue
- 6Pt1
- Journal Page Range
- p. 1797-1802.
- ISSN
- 0018-9499
- CODEN
- IETNAE
Conference
- Title
- 32. annual IEEE international nuclear and space radiation effects conference.
- Dates
- 17-21 Jul 1995.
- Place
- Madison, WI (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 27045569
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- EXPERIMENTAL DATA; HEAVY IONS; LET; PHYSICAL RADIATION EFFECTS; RESPONSE FUNCTIONS; SEMICONDUCTOR STORAGE DEVICES
- Descriptors DEC
- CHARGED PARTICLES; DATA; ENERGY TRANSFER; FUNCTIONS; INFORMATION; IONS; MEMORY DEVICES; NUMERICAL DATA; RADIATION EFFECTS; SEMICONDUCTOR DEVICES
Optional Information
- Secondary number(s)
- CONF-950716--.