Published June 5, 1980
| Version v1
Journal article
Deep trapping centres in n-GaAs surface barrier diodes for nuclear radiation detection
- 1. Australian Atomic Energy Commission Research Establishment, Lucas Heights. Instrumentation and Control Div.
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Electron. Lett.
- Journal Volume
- 16
- Journal Issue
- 12
- Series
- Electron. Lett.
- Journal Page Range
- 483-484
- ISSN
- 0013-5194
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 11562733
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- EPITAXY; GALLIUM ARSENIDES; LEVELS; SURFACE BARRIER DETECTORS; TRAPS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; MEASURING INSTRUMENTS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS
Optional Information
- Notes
- Brief note.