Electrical Properties of Cr/Si Schottky Diodes Through I-V Measurement

Electrical properties of Cr/p-Si (D1) and Cr/n-Si (D-2) Metal-Semiconductor (MS) structures were worked out through current-voltage (I-V) measurements studied under various temperatures (T) in dark condition and transport mechanisms of the junctions at hand were attempted to resolve. Fundamental diode parameters of Cr/Si Schottky diodes such as ideality factors and barrier heights and conduction mechanisms were determined from I-V measurement: the former were estimated as 1.4-1.3 and 0.85-0.83 eV for D1 and D2, respectively. Meanwhile, ohmic and SCLC were the enrolled conduction mechanisms for the low and high forward bias voltage regimes, respectively. Moreover, power of the voltage (m) altered from 8.0 to 6.5 as ambient temperature increase for n-type substrate whilst it changed between 4.0 and 2.8 for p-type one, exploited from ln(I)-ln(V) curves for the second regime. The case of m > 2 revealed both presence of high amount of interface traps located between Cr metal and Si semiconductor and exponential type trap distribution. From the m-1 versus 1/T plot, characteristic temperatures (Tt) were obtained as 942K and 862K for Cr/p-Si and Cr/n-Si, respectively