Formation of the ferromagnetic semiconductor InMnP:Zn through low-temperature annealing by using Mn/InP:Zn bilayer

The ferromagnetic semiconductor p-InMnP:Zn epilayers were prepared through low-temperature annealing at 250 .deg. C by using Mn/InP:Zn bilayers. The p-type InP:Zn epilayers were prepared by using metal-organic chemical vapor deposition. Then, ultra-thin Mn layers were subsequently deposited onto the layers by using molecular beam epitaxy. The Mn/InP:Zn bilayers were annealed at a low temperature of 250 .deg. C in order to minimize the formation of precipitates such as InMn, MnP, Mn2P, and Mn3In. No ferromagnetic precipitates were observed in the annealed InMnP:Zn; however, the sample exhibited an anti-ferromagnetic phase of MnO2 that might have been formed because of an unavoidable surface oxide that had been created during the sample transfer. Despite the existence of antiferromagnetic MnO2, the samples revealed clear ferromagnetic hysteresis loops and showed high ferromagnetic transition temperatures up to ∼180 K. The results suggest that a ferromagnetic semiconductor InMnP:Zn can be effectively formed through low-temperature annealing by using a Mn/InP:Zn bilayer.