Published October 2, 2015 | Version v1
Journal article Metadata-only

Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure

Creators

  • 1. Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China)
  • 2. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China)
  • 3. Cuiying Honors College, Lanzhou University, Lanzhou 730000 (China)
  • 4. Institute of Sensor Technology, Gansu Academy of Sciences, Lanzhou 730000 (China)

Description

Diode-like volatile resistive switching as well as nonvolatile resistive switching behaviors in a Cu/ZrO2/TiO2/Ti stack are investigated. Depending on the current compliance during the electroforming process, either volatile resistive switching or nonvolatile resistive switching is observed. With a lower current compliance (<10 μA), the Cu/ZrO2/TiO2/Ti device exhibits diode-like volatile resistive switching with a rectifying ratio over 106. The permanent transition from volatile to nonvolatile resistive switching can be obtained by applying a higher current compliance of 100 μA. Furthermore, by using different reset voltages, the Cu/ZrO2/TiO2/Ti device exhibits multilevel memory characteristics with high uniformity. The coexistence of nonvolatile multilevel memory and diode-like volatile resistive switching behaviors in the same Cu/ZrO2/TiO2/Ti device opens areas of applications in high-density storage, logic circuits, neural networks, and passive crossbar memory selectors. (fast track communication)

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/26/39/391001

Additional details

Identifiers

DOI
10.1088/0957-4484/26/39/391001;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
26
Journal Issue
39
Journal Page Range
[5 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
48007806
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Numerical Data
Descriptors DEI
ELECTRIC POTENTIAL; EXPERIMENTAL DATA; LOGIC CIRCUITS; MEMORY DEVICES; NANOSTRUCTURES; SWITCHES; TITANIUM OXIDES; VOLATILITY; ZIRCONIUM OXIDES
Descriptors DEC
CHALCOGENIDES; DATA; ELECTRICAL EQUIPMENT; ELECTRONIC CIRCUITS; EQUIPMENT; INFORMATION; NUMERICAL DATA; OXIDES; OXYGEN COMPOUNDS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZIRCONIUM COMPOUNDS