Published February 1994 | Version v1
Report Open

Characterization and control of wafer charging effects during high-current ion implantation

Creators

  • 1. Applied Materials, Santa Clara, CA (United States)
  • 2. Stanford Univ., CA (United States)
  • 3. Lawrence Berkeley Lab., CA (United States)
  • 4. National Semiconductor, West Jordan, UT (United States)

Description

EEPROM-based sense and memory devices provide direct measures of the charge flow and potentials occurring on the surface of wafers during ion beam processing. Sensor design and applications for high current ion implantation are discussed

Availability note (English)

MF available from INIS under the Report Number; Also available from OSTI as DE95006587; NTIS; US Govt. Printing Office Dep.

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Additional details

Publishing Information

Imprint Pagination
12 p.
Report number
LBL--35962

Conference

Title
185. Electrochemical Society meeting.
Dates
22-27 May 1994.
Place
San Francisco, CA (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
26050388
Subject category
S42: ENGINEERING; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ION BEAM INJECTION; ION IMPLANTATION; MONITORING; MOS TRANSISTORS; RELIABILITY
Descriptors DEC
BEAM INJECTION; SEMICONDUCTOR DEVICES; TRANSISTORS

Optional Information

Contract/Grant/Project number
Contract AC03-76SF00098
Funding organization
USDOE, Washington, DC (United States).
Secondary number(s)
CONF-940529--27.