Densification of silica glass at ambient pressure
- 1. Physics Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
- 2. School of Earth and Space Sciences, University of Science and Technology of China, Hefei, Anhui 230026 (China)
- 3. Department of Chemistry, University of Missouri, Columbia, Missouri 65211 (United States)
Description
We show that densification of silica glass at ambient pressure as observed in irradiation experiments can be attributed to defect generation and subsequent structure relaxation. In our molecular dynamics simulations, defects are created by randomly removing atoms, by displacing atoms from their nominal positions in an otherwise intact glass, and by assigning certain atom excess kinetic energy (simulated ion implantation). The former forms vacancies; displacing atoms and ion implantation produce both vacancies and 'interstitials'. Appreciable densification is induced by these defects after equilibration of the defective glasses. The structural and vibrational properties of the densified glasses are characterized, displaying resembling features regardless of the means of densification. These results indicate that relaxation of high free-energy defects into metastable amorphous structures enriched in atomic coordination serves as a common mechanism for densification of silica glass at ambient pressure
Additional details
Identifiers
- DOI
- 10.1063/1.2358130;
Publishing Information
- Journal Title
- Journal of Chemical Physics
- Journal Volume
- 125
- Journal Issue
- 15
- Journal Page Range
- p. 154511-154511.7
- ISSN
- 0021-9606
- CODEN
- JCPSA6
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38032890
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DEFECTS; FREE ENERGY; GLASS; INTERSTITIALS; ION IMPLANTATION; IRRADIATION; KINETIC ENERGY; MOLECULAR DYNAMICS METHOD; RELAXATION; SILICA; SILICON COMPOUNDS; SIMULATION; VACANCIES
- Descriptors DEC
- CALCULATION METHODS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ENERGY; MINERALS; OXIDE MINERALS; PHYSICAL PROPERTIES; POINT DEFECTS; THERMODYNAMIC PROPERTIES
Optional Information
- Notes
- (c) 2006 American Institute of Physics