Published 2002 | Version v1
Miscellaneous

Stress development during thin film growth and its modification under ion irradiation

  • 1. Zaklad Fizyki Doswiadczalnej, Instytut Fizyki, Politechnika Lubelska, Lublin (Poland)
  • 2. Zaklad Fizyki Ogolnej i Dydaktyki Fizyki, Instytut Fizyki, UMCS, Lublin (Poland)
  • 3. Laboratoire de Metallurgie Physique, UMR CNRS, Universite de Poitiers, Chasseneuil (France)

Description

no abstract available

Part of:
Abstracts of International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2002

Additional details

Publishing Information

Imprint Title
Abstracts of International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2002
Imprint Pagination
174 p.
Journal Page Range
p. 37

Conference

Title
4. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2002
Dates
10-13 Jun 2002
Place
Kazimierz Dolny (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
34075106
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
ARGON IONS; COPPER; CRYSTAL GROWTH; GOLD; ION BEAMS; ION IMPLANTATION; IRRADIATION; LASER RADIATION; MOLYBDENUM; OPTIMIZATION; SILICON; SILVER; STRESS ANALYSIS; STRESS RELAXATION; SUBSTRATES; THIN FILMS
Descriptors DEC
BEAMS; CHARGED PARTICLES; ELECTROMAGNETIC RADIATION; ELEMENTS; FILMS; IONS; METALS; RADIATIONS; REFRACTORY METALS; RELAXATION; SEMIMETALS; TRANSITION ELEMENTS

Optional Information