Published 2002
| Version v1
Miscellaneous
Stress development during thin film growth and its modification under ion irradiation
Creators
- 1. Zaklad Fizyki Doswiadczalnej, Instytut Fizyki, Politechnika Lubelska, Lublin (Poland)
- 2. Zaklad Fizyki Ogolnej i Dydaktyki Fizyki, Instytut Fizyki, UMCS, Lublin (Poland)
- 3. Laboratoire de Metallurgie Physique, UMR CNRS, Universite de Poitiers, Chasseneuil (France)
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts of International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2002
- Imprint Pagination
- 174 p.
- Journal Page Range
- p. 37
Conference
- Title
- 4. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2002
- Dates
- 10-13 Jun 2002
- Place
- Kazimierz Dolny (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 34075106
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ARGON IONS; COPPER; CRYSTAL GROWTH; GOLD; ION BEAMS; ION IMPLANTATION; IRRADIATION; LASER RADIATION; MOLYBDENUM; OPTIMIZATION; SILICON; SILVER; STRESS ANALYSIS; STRESS RELAXATION; SUBSTRATES; THIN FILMS
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; ELECTROMAGNETIC RADIATION; ELEMENTS; FILMS; IONS; METALS; RADIATIONS; REFRACTORY METALS; RELAXATION; SEMIMETALS; TRANSITION ELEMENTS