Published December 8, 2010 | Version v1
Journal article

A study of the electronic structure of FeSe1-xTex chalcogenides by Fe and Se K-edge x-ray absorption near edge structure measurements

  • 1. Dipartimento di Fisica, Universita di Roma 'La Sapienza', Piazzale Aldo Moro 2, 00185 Roma (Italy)
  • 2. European Synchrotron Radiation Facility, 6 RUE Jules Horowitz BP 220 38043, Grenoble Cedex 9 (France)
  • 3. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)
  • 4. Department of Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561 (Japan)

Description

Fe K-edge and Se K-edge x-ray absorption near edge structure (XANES) measurements are used to study the FeSe1-xTex electronic structure of chalcogenides. An intense Fe K-edge pre-edge peak due to Fe 1s → 3d (and admixed Se/Te p states) is observed, showing substantial change with Te substitution and x-ray polarization. The main white line peak in the Se K-edge XANES due to Se 1s→4p transition appears similar to the one expected for Se2- systems and changes with Te substitution. Polarization dependence reveals that unoccupied Se orbitals near the Fermi level have predominant px,y character. The results provide key information on the hybridization of Fe 3d and chalcogen p states in the Fe-based chalcogenide superconductors.

Availability note (English)

Available from http://dx.doi.org/10.1088/0953-8984/22/48/485702

Additional details

Identifiers

DOI
10.1088/0953-8984/22/48/485702;
PII
S0953-8984(10)69421-0;

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
22
Journal Issue
48
Journal Page Range
[5 p.]
ISSN
0953-8984
CODEN
JCOMEL