Published February 2010 | Version v1
Journal article Metadata-only

Experimental determination of band offsets at the SnS/CdS and SnS/InSxOy heterojunctions

Creators

  • 1. Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555 (Japan)

Description

The semidirect x-ray photoelectron spectroscopy technique was used to measure the band alignments at the interface of heterostructures based on SnS. The layers were deposited by electrochemical deposition (ECD), chemical bath deposition (CBD), or photochemical deposition (PCD). The following four kinds of heterojunctions were characterized. (1) ECD-SnS/PCD-CdS. (2) CBD-SnS/PCD-CdS. (3) ECD-SnS/ECD-InSxOy. (4) CBD-SnS/ECD-InSxOy. The valence band offsets ΔEV of those four heterojunctions are determined to be 1.34, 1.59, 0.77, and 0.74±0.3 eV, respectively.

Additional details

Identifiers

DOI
10.1063/1.3294619;

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
107
Journal Issue
3
Journal Page Range
p. 034507-034507.5
ISSN
0021-8979
CODEN
JAPIAU

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42069577
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CADMIUM SULFIDES; ELECTRODEPOSITION; ELECTRONIC STRUCTURE; EV RANGE; HETEROJUNCTIONS; INTERFACES; LAYERS; PHOTOCHEMISTRY; SEMICONDUCTOR MATERIALS; TIN SULFIDES; VALENCE; X-RAY PHOTOELECTRON SPECTROSCOPY
Descriptors DEC
CADMIUM COMPOUNDS; CHALCOGENIDES; CHEMISTRY; DEPOSITION; ELECTROLYSIS; ELECTRON SPECTROSCOPY; ENERGY RANGE; INORGANIC PHOSPHORS; LYSIS; MATERIALS; PHOSPHORS; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR JUNCTIONS; SPECTROSCOPY; SULFIDES; SULFUR COMPOUNDS; SURFACE COATING; TIN COMPOUNDS

Optional Information

Notes
(c) 2010 American Institute of Physics