Published 1994 | Version v1
Report Open

Coherent V2O3 precipitates in α-Al2O3 co-implanted with vanadium and oxygen

  • 1. Oak Ridge National Lab., TN (United States). Solid State Div.
  • 2. Brown Univ., Providence, RI (United States)

Description

The oxides of vanadium VO2 and V2O3 are of fundamental and practical interest since they undergo structural phase transitions during which large variations in their optical and electronic properties are observed. In the present work, the authors report the formation of buried precipitates of V2O3 in sapphire by ion implantation and thermal annealing. It was found that the co-implantation of oxygen and vanadium was required in order to form nanophase V2O3 precipitates. Additionally, these precipitates, which formed only following an anneal of the co-implanted sample under reducing conditions, are coherent with the sapphire lattice. Two epitaxial relationships were observed: (0001)V2O3//(0001) α-Al2O3 and (11--20)V2O3//(0001) α-Al2O3. This finding is in agreement with results obtained elsewhere for thin films of V2O3 deposited on c-axis-oriented sapphire

Availability note (English)

MF available from INIS under the Report Number; Also available from OSTI as DE95007404; NTIS; US Govt. Printing Office Dep.

Files

26049750.pdf

Files (383.7 kB)

Name Size Download all
md5:8e4253575a079d81d5f9605756420de0
383.7 kB Preview Download

Additional details

Publishing Information

Imprint Pagination
6 p.
Report number
CONF-941144--74

Conference

Title
1994 fall meeting of the Materials Research Society (MRS).
Dates
28 Nov - 2 Dec 1994.
Place
Boston, MA (United States).

Optional Information

Contract/Grant/Project number
Contract AC05-84OR21400
Funding organization
USDOE, Washington, DC (United States).