Published March 23, 2009
| Version v1
Journal article
Periodic alignment of Si quantum dots on hafnium oxide coated single wall carbon nanotubes
Creators
- 1. Department of Electrical Engineering, University of California, Riverside, California 92521 (United States)
- 2. Department of Physics and Astronomy, University of California, Riverside, California 92521 (United States)
- 3. Department of Mechanical Engineering, University of California, Riverside, California 92521 (United States)
Description
We demonstrate a bottom up approach for the aligned epitaxial growth of Si quantum dots (QDs) on one-dimensional (1D) hafnium oxide (HfO2) ridges created by the growth of HfO2 thin film on single wall carbon nanotubes. This growth process creates a high strain 1D ridge on the HfO2 film, which favors the formation of Si seeds over the surrounding flat HfO2 area. Periodic alignment of Si QDs on the 1D HfO2 ridge was observed, which can be controlled by varying different growth conditions, such as growth temperature, growth time, and disilane flow rate
Additional details
Identifiers
- DOI
- 10.1063/1.3103547;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 94
- Journal Issue
- 12
- Journal Page Range
- p. 123109-123109.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40051440
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CARBON; CRYSTAL GROWTH; FLOW RATE; HAFNIUM OXIDES; MOLECULAR BEAM EPITAXY; NANOTUBES; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SILICON; THIN FILMS
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL GROWTH METHODS; ELEMENTS; EPITAXY; FILMS; HAFNIUM COMPOUNDS; MATERIALS; NANOSTRUCTURES; NONMETALS; OXIDES; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; SEMIMETALS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2009 American Institute of Physics