Unconventional anomalous Hall effect in a triangular lattice antiferromagnet
Creators
- 1. Department of Physics, Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043, Japan
- 2. Center for Spintronics Research Network, Osaka University, Toyonaka, Osaka 560-8531, Japan
- 3. Institute for Open and Transdisciplinary Research Initiatives, Osaka University, Suita, Osaka 565-0871, Japan
- 4. Forefront Research Center, Osaka University, Toyonaka, Osaka 560-0043, Japan
- 5. Department of Physics, Tokyo Institute of Technology, Meguro, Tokyo 152-8551, Japan
- 6. Department of Physics, Faculty of Science, Hokkaido University, Sapporo, Hokkaido 060-0810, Japan
Description
We studied the electrical transport properties of a classical spin triangular lattice antiferromagnet . In this material, a unique spin structure with a five-sublattice unit cell emerges below the Néel temperature , owing to frustration from strong further-neighbor interactions. The material also exhibits unique electrical transport properties coupled with its magnetism, due to a highly conductive layer of . Here, we report magnetoresistance and the Hall effect in flake devices below and above up to a magnetic field of 8 T. A large magnetoresistance and anomalous Hall effect were observed in the vicinity of , indicating that the fluctuation of the magnetic moments plays a key role. We propose possible scenarios in which the anomalous Hall effect is enhanced through thermal fluctuation.
Additional details
Identifiers
- DOI
- 10.1103/PhysRevB.110.024431;
- Crossref Funder ID
- 10.13039/501100001691; 10.13039/501100001695;
Publishing Information
- Journal Title
- Physical Review B
- Journal Volume
- 110
- Journal Issue
- 2
- Journal Page Range
- 7 pgs.
- ISSN
- 1550-235X
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANTIFERROELECTRIC MATERIALS; ANTIFERROMAGNETIC MATERIALS; ANTIFERROMAGNETISM; ELECTRICAL PROPERTIES; EQUIPMENT; FLUCTUATIONS; HALL EFFECT; LAYERS; MAGNETIC FIELDS; MAGNETIC MOMENTS; MAGNETORESISTANCE; MANGANESE SILICIDES; NEEL TEMPERATURE; SILVER SULFIDES; SPIN; SPIN EXCHANGE
- Descriptors DEC
- ANGULAR MOMENTUM; CHALCOGENIDES; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; MAGNETIC MATERIALS; MAGNETISM; MANGANESE COMPOUNDS; MATERIALS; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; SILICIDES; SILICON COMPOUNDS; SILVER COMPOUNDS; SULFIDES; SULFUR COMPOUNDS; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT COMPOUNDS; TRANSITION TEMPERATURE; VARIATIONS
Optional Information
- Copyright
- ©2024 American Physical Society
- Contract/Grant/Project number
- JP20H02557; JP21J20477; JP22H04481; JP23H00257; JPMJFR2134
- Notes
- Contact Email: Contact author: watanabe@meso.phys.sci.osaka-u.ac.jp; Contact Email: Contact author: niimi@phys.sci.osaka-u.ac.jp; Record automatically processed
- Funding organization
- Japan Society for the Promotion of Science; Japan Science and Technology Corporation