Published 2020 | Version v1
Book Metadata-only

Study of the formation process of point defects under the influence of intense soft X-ray radiation on the CdHgTe semiconductor

Creators

  • 1. Natsional'nyj Issledovatel'skij Yadernyj Univ. «MIFI», Moscow (Russian Federation)
  • 2. Voennaya Akademiya RVSN im. Petra Velikogo, Balashikha (Russian Federation)

Description

Experimental data of photoelectrons emission from the surface of a CdHgTe sample under the influence of intense soft X-ray radiation were obtained, which made it possible to calculate the amplitude values of the electric field on the surface of a semiconductor, the action of which leads to the displacement of mercury ions from the nodes of the crystal lattice and the formation of point defects

Abstract (Russian)

Получены экспериментальные данные по эмиссии фотоэлектронов с поверхности образца CdHgTe под действием интенсивного мягкого рентгеновского излучения, которые позволили рассчитать амплитудные значения электрического поля на поверхности полупроводника, действие которого приводит к смещению ионов ртути из узлов кристаллической решётки и образованию точечных дефектов
Part of:
VI International conference «Laser, plasma research and technologies – LaPlaz-2020». Collection of scientific papers. Part 1

Additional details

Additional titles

Original title (Russian)
Изучение процесса образования точечных дефектов при воздействии интенсивного мягкого рентгеновского излучения на полупроводник CdHgTe

Publishing Information

Publisher
NIYaU MIFI
Imprint Place
Moscow (Russian Federation)
ISBN
978-5-7262-2655-2
Imprint Title
VI International conference #Left-Pointing Double Angle Quotation Mark#Laser, plasma research and technologies #En Dash# LaPlaz-2020#Right-Pointing Double Angle Quotation Mark#. Collection of scientific papers. Part 1
Imprint Pagination
463 p.
Journal Page Range
p. 44-45

Conference

Title
International Conference on Laser, Plasma Research and Technologies
Original Conference Title
VI Mezhdunarodnaya konferentsiya «Lazernye, plazmennye issledovaniya i tekhnologii – LaPlaz-2020»
Acronym
LaPlas 2020
Dates
11-14 Feb 2020
Place
Moscow (Russian Federation)

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
53056506
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
CADMIUM TELLURIDES; DIAGRAMS; ELECTRIC FIELDS; EV RANGE 100-1000; EV RANGE 10-100; EXPERIMENTAL DATA; MERCURY TELLURIDES; PHOTOELECTRIC EMISSION; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; SEMICONDUCTOR MATERIALS; SOFT X RADIATION; SOLID SOLUTIONS
Descriptors DEC
CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DATA; DISPERSIONS; ELECTROMAGNETIC RADIATION; ELECTRON EMISSION; EMISSION; ENERGY RANGE; EV RANGE; HOMOGENEOUS MIXTURES; INFORMATION; IONIZING RADIATIONS; MATERIALS; MERCURY COMPOUNDS; MIXTURES; NUMERICAL DATA; PHOTOELECTRIC EFFECT; RADIATION EFFECTS; RADIATIONS; SOLUTIONS; TELLURIDES; TELLURIUM COMPOUNDS; X RADIATION

Optional Information

Notes
2 refs., 1 fig. Imprint:VI Mezhdunarodnaya konferentsiya #Left-Pointing Double Angle Quotation Mark#Lazernye, plazmennye issledovaniya i tekhnologii #En Dash# LaPlaz-2020#Right-Pointing Double Angle Quotation Mark#. Sbornik nauchnykh trudov. Chast' 1