Published 2005 | Version v1
Journal article Metadata-only

Optically detected microwave resonance and carrier dynamics in InAs/GaAs quantum dots

Creators

  • 1. Semiconductor Physics Institute, Vilnius (Lithuania)
  • 2. Department of Microelectronics and Information Technology, Royal Institute of Technology, Kista (Sweden)
  • 3. Department of Physics, University of Antwerp, Antwerp (Belgium)
  • 4. Department of Physics, Eindhoven University of Technology, Eindhoven (Netherlands)

Description

The properties of small-sized high density InAs/GaAs quantum dots (emitting at 1.25 eV) are studied by means of optically detected microwave resonance spectroscopy and time resolved photoluminescence techniques. The results are discussed in terms of trapping and thermal escape of the carriers as well as their relaxation and recombination in quantum dots the data are compared with those recently obtained on shallowly formed InAs quantum dot structures. (author)

Additional details

Publishing Information

Journal Title
Acta Physica Polonica. Series A
Journal Volume
107
Journal Issue
2
Journal Page Range
p. 435-439
ISSN
0587-4246

Conference

Title
12. International Symposium on Ultrafast Phenomena in Semiconductors (12-UFPS). Part 2
Dates
22-25 Aug 2005
Place
Vilnius (Lithuania)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
37029581
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CHARGE CARRIERS; CHARGE TRANSPORT; GALLIUM ARSENIDES; INDIUM ARSENIDES; LIFETIME; MAGNETIC FIELDS; PHOTOLUMINESCENCE; QUANTUM DOTS; RECOMBINATION; RELAXATION; RESONANCE; TEMPERATURE DEPENDENCE; TIME RESOLUTION; TRAPPING
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; EMISSION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES; RESOLUTION; TIMING PROPERTIES

Optional Information

Notes
7 refs, 2 figs